JAN1N6661US/TR
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JAN1N6661US/TR
Brand：Microchip
Model：JAN1N6661US/TR
stock：79747
Store：ShenZhen/Hongkong
Price:
The market price fluctuates. Please consult the customer service for the actual price
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WhatsApp：+86 19166251823
Email：online3@ssf-asia.com
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product details
Common problem
Industry trends
| Installation type | Surface mount |
| packing | TR |
| series | Military, MIL-PRF-19500/587 |
| Part status | On sale |
| speed | Standard recovery>500ns,> 200mA(Io) |
| Encapsulation/Housing | SQ-MELF,A |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| Supplier device packaging | D-5A |
| Diode type | standard |
| Voltage DC reverse (Vr) (maximum) | 225 V |
| Current average rectification (Io) | 500mA |
| Voltage at different If - forward (Vf) | 1 V @ 400 mA |
| Current - reverse leakage at different Vr | 50 nA @ 225 V |
Common problem
Industry trends
DRAM is severely oversupplied and is not expected to stop until the third quarter of 2023
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