| Installation type | Surface mount |
| packing | bulk |
| Part status | On sale |
| speed | No recovery time > 500mA(Io) |
| Encapsulation/Housing | mould |
| Country of origin | Germany |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| Supplier device packaging | Foil cut wafer |
| Diode type | SiC Schottky |
| Voltage DC reverse (Vr) (maximum) | 600 V |
| Current average rectification (Io) | 4A(DC) |
| Voltage at different If - forward (Vf) | 1.9 V @ 4 A |
| Reverse recovery time (trr) | 0 ns |
| Current - reverse leakage at different Vr | 200 µA @ 600 V |
| Capacitance at different Vr and F | 150pF @ 1V,1MHz |