| Installation type | Surface mount |
| packing | TR,CT |
| Part status | On sale |
| working temperature | -55°C ~ 150°C(TJ) |
| Encapsulation/Housing | 6-UFDFN Exposed Pad |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| Power - maximum | 900mW |
| FET Type | 2 N Channel(two)Co leakage |
| Drain source voltage (Vdss) | 20V |
| Current at 25 ° C - continuous drain (Id) | 7.5A |
| On resistance (maximum) for different Ids and Vgs | 20.2 mΩ @ 4.5A,4.5V |
| Vgs (th) (maximum) for different Ids | 1V @ 250µA |
| Gate charge (Qg) at different Vgs (maximum) | 18.4nC @ 8V |
| Input capacitance at different Vds (Ciss) (maximum) | 887pF @ 10V |
| FET function | standard |