| Installation type | Surface mount |
| packing | TR |
| Part status | On sale |
| working temperature | -55°C ~ 150°C(TJ) |
| Encapsulation/Housing | SOT-23-6 ,TSOT-23-6 |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| Power - maximum | 830mW |
| FET Type | N and P Channel Complementary type |
| Drain source voltage (Vdss) | 30V |
| Current at 25 ° C - continuous drain (Id) | 3.6A(Ta),2.8A(Ta) |
| On resistance (maximum) for different Ids and Vgs | 60 mΩ @ 3.1A,10V,95 mΩ @ 2.7A,10V |
| Vgs (th) (maximum) for different Ids | 1.8V @ 250µA,2.1V @ 250µA |
| Gate charge (Qg) at different Vgs (maximum) | 11.3nC @ 10V |
| Input capacitance at different Vds (Ciss) (maximum) | 395pF @ 15V,324pF @ 15V |
| FET function | standard |