ZXMD65P02N8TA
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ZXMD65P02N8TA
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ZXMD65P02N8TA

Brand:Diodes
Model:ZXMD65P02N8TA
stock:21149
Store:ShenZhen/Hongkong
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
Industry trends
Installation type Surface mount
packing TR,CT
Part status stop production
Encapsulation/Housing 8-SOIC(0.154,3.90mm wide)
Warehouse China/Hong Kong
quality Original genuine
Power - maximum 1.75W
FET Type 2 P Channel(two)
Drain source voltage (Vdss) 20V
Current at 25 ° C - continuous drain (Id) 4A
On resistance (maximum) for different Ids and Vgs 50 mΩ @ 2.9A,4.5V
Vgs (th) (maximum) for different Ids 700mV @ 250µA(min)
Gate charge (Qg) at different Vgs (maximum) 20nC @ 4.5V
Input capacitance at different Vds (Ciss) (maximum) 960pF @ 15V
FET function standard
Common problem
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