ZXMN3A06DN8TC
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ZXMN3A06DN8TC
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ZXMN3A06DN8TC

Brand:Diodes
Model:ZXMN3A06DN8TC
stock:18330
Store:ShenZhen/Hongkong
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
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Installation type Surface mount
packing TR
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing 8-SOIC(0.154,3.90mm wide)
Warehouse China/Hong Kong
quality Original genuine
Power - maximum 1.8W
FET Type 2 N-channels(two)
Drain source voltage (Vdss) 30V
Current at 25 ° C - continuous drain (Id) 4.9A
On resistance (maximum) for different Ids and Vgs 35 mΩ @ 9A,10V
Vgs (th) (maximum) for different Ids 1V @ 250µA(min)
Gate charge (Qg) at different Vgs (maximum) 17.5nC @ 10V
Input capacitance at different Vds (Ciss) (maximum) 796pF @ 25V
FET function Logic level gate
Common problem
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