| Installation type | Surface mount | 
| packing | TR,CT | 
| series | HEXFET® | 
| Part status | Not applicable to new design | 
| working temperature | -55°C ~ 150°C(TJ) | 
| Encapsulation/Housing | 8-PowerVDFN | 
| Warehouse | China/Hong Kong | 
| quality | Original genuine | 
| Power - maximum | 31W,50W | 
| FET Type | 2 N-channels(two) | 
| Drain source voltage (Vdss) | 25V | 
| Current at 25 ° C - continuous drain (Id) | 64A,145A | 
| On resistance (maximum) for different Ids and Vgs | 3.2 mΩ @ 30A,10V | 
| Vgs (th) (maximum) for different Ids | 2.1V @ 35µA | 
| Gate charge (Qg) at different Vgs (maximum) | 15nC @ 4.5V | 
| Input capacitance at different Vds (Ciss) (maximum) | 1314pF @ 13V | 
| FET function | Logic level gate |