| Installation type | Surface mount |
| packing | TR,CT |
| series | HEXFET® |
| Part status | Not applicable to new design |
| working temperature | -55°C ~ 150°C(TJ) |
| Encapsulation/Housing | 8-PowerVDFN |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| Power - maximum | 31W,50W |
| FET Type | 2 N-channels(two) |
| Drain source voltage (Vdss) | 25V |
| Current at 25 ° C - continuous drain (Id) | 64A,145A |
| On resistance (maximum) for different Ids and Vgs | 3.2 mΩ @ 30A,10V |
| Vgs (th) (maximum) for different Ids | 2.1V @ 35µA |
| Gate charge (Qg) at different Vgs (maximum) | 15nC @ 4.5V |
| Input capacitance at different Vds (Ciss) (maximum) | 1314pF @ 13V |
| FET function | Logic level gate |