| Installation type | Surface mount |
| packing | TR,CT,bulk |
| series | HEXFET® |
| Part status | On sale |
| working temperature | -55°C ~ 175°C(TJ) |
| Encapsulation/Housing | 8-PowerTDFN |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| Power - maximum | 50W |
| FET Type | 2 N-channels(two) |
| Drain source voltage (Vdss) | 40V |
| Current at 25 ° C - continuous drain (Id) | 50A |
| On resistance (maximum) for different Ids and Vgs | 5.9 mΩ @ 40A,10V |
| Vgs (th) (maximum) for different Ids | 3.9V @ 50µA |
| Gate charge (Qg) at different Vgs (maximum) | 60nC @ 10V |
| Input capacitance at different Vds (Ciss) (maximum) | 2250pF @ 25V |
| FET function | standard |