| Installation type | Surface mount |
| packing | TR |
| series | HEXFET® |
| Part status | Not applicable to new design |
| working temperature | -55°C ~ 150°C(TJ) |
| Encapsulation/Housing | 18-PowerVQFN |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| Power - maximum | 2.4W,3.4W |
| FET Type | 2 N-channels(two) |
| Drain source voltage (Vdss) | 30V |
| Current at 25 ° C - continuous drain (Id) | 13A,28A |
| On resistance (maximum) for different Ids and Vgs | 8.6 mΩ @ 12A,10V |
| Vgs (th) (maximum) for different Ids | 2.35V @ 25µA |
| Gate charge (Qg) at different Vgs (maximum) | 12nC @ 4.5V |
| Input capacitance at different Vds (Ciss) (maximum) | 1060pF @ 15V |
| FET function | Logic level gate |