| Installation type | Surface mount |
| packing | TR |
| series | HEXFET® |
| Part status | stop production |
| working temperature | -55°C ~ 150°C(TJ) |
| Encapsulation/Housing | 8-SOIC(0.154,3.90mm wide) |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| Power - maximum | 2W |
| FET Type | 2 P Channel(two) |
| Drain source voltage (Vdss) | 30V |
| Current at 25 ° C - continuous drain (Id) | 4.9A |
| On resistance (maximum) for different Ids and Vgs | 58 mΩ @ 4.9A,10V |
| Vgs (th) (maximum) for different Ids | 1V @ 250µA |
| Gate charge (Qg) at different Vgs (maximum) | 34nC @ 10V |
| Input capacitance at different Vds (Ciss) (maximum) | 710pF @ 25V |
| FET function | Logic level gate |