IRF7379TR
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IRF7379TR
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IRF7379TR

Brand:Infineon
Model:IRF7379TR
stock:28768
Store:ShenZhen/Hongkong
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
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Installation type Surface mount
packing TR
series HEXFET®
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing 8-SOIC(0.154,3.90mm wide)
Warehouse China/Hong Kong
quality Original genuine
Power - maximum 2.5W
FET Type N and P Channel
Drain source voltage (Vdss) 30V
Current at 25 ° C - continuous drain (Id) 5.8A,4.3A
On resistance (maximum) for different Ids and Vgs 45 mΩ @ 5.8A,10V
Vgs (th) (maximum) for different Ids 1V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 25nC @ 10V
Input capacitance at different Vds (Ciss) (maximum) 520pF @ 25V
FET function standard
Common problem
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