| Installation type | Surface mount |
| packing | TR |
| series | HEXFET® |
| Part status | stop production |
| working temperature | -55°C ~ 150°C(TJ) |
| Encapsulation/Housing | SOT-23-6 ,TSOT-23-6 |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| Power - maximum | 960mW |
| FET Type | N and P Channel |
| Drain source voltage (Vdss) | 20V |
| Current at 25 ° C - continuous drain (Id) | 2.7A,2.2A |
| On resistance (maximum) for different Ids and Vgs | 90 mΩ @ 2.7A,4.5V |
| Vgs (th) (maximum) for different Ids | 1.25V @ 250µA |
| Gate charge (Qg) at different Vgs (maximum) | 6nC @ 4.5V |
| Input capacitance at different Vds (Ciss) (maximum) | 400pF @ 15V |
| FET function | Logic level gate |