| Installation type | Surface mount | 
| packing | pipe | 
| series | HEXFET® | 
| Part status | stop production | 
| working temperature | -55°C ~ 150°C(TJ) | 
| Encapsulation/Housing | 8-SOIC(0.154,3.90mm wide) | 
| Warehouse | China/Hong Kong | 
| quality | Original genuine | 
| Power - maximum | 2W | 
| FET Type | N and P Channel | 
| Drain source voltage (Vdss) | 55V | 
| Current at 25 ° C - continuous drain (Id) | 4.7A,3.4A | 
| On resistance (maximum) for different Ids and Vgs | 50 mΩ @ 4.7A,10V | 
| Vgs (th) (maximum) for different Ids | 1V @ 250µA | 
| Gate charge (Qg) at different Vgs (maximum) | 36nC @ 10V | 
| Input capacitance at different Vds (Ciss) (maximum) | 740pF @ 25V | 
| FET function | Logic level gate |