| Installation type | Surface mount |
| packing | pipe |
| series | HEXFET® |
| Part status | stop production |
| working temperature | -55°C ~ 150°C(TJ) |
| Encapsulation/Housing | 8-SOIC(0.154,3.90mm wide) |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| Power - maximum | 2W |
| FET Type | N and P Channel |
| Drain source voltage (Vdss) | 30V |
| Current at 25 ° C - continuous drain (Id) | 3.5A,2.3A |
| On resistance (maximum) for different Ids and Vgs | 100 mΩ @ 2.2A,10V |
| Vgs (th) (maximum) for different Ids | 3V @ 250µA |
| Gate charge (Qg) at different Vgs (maximum) | 14nC @ 10V |
| Input capacitance at different Vds (Ciss) (maximum) | 190pF @ 15V |
| FET function | Logic level gate |