| Installation type | Surface mount |
| packing | TR |
| series | HEXFET® |
| Part status | stop production |
| working temperature | -55°C ~ 150°C(TJ) |
| Encapsulation/Housing | 8-SOIC(0.154,3.90mm wide) |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| Power - maximum | 2W(Ta) |
| FET Type | 2 N-channels(two) |
| Drain source voltage (Vdss) | 20V |
| Current at 25 ° C - continuous drain (Id) | 10A(Ta),12A(Ta) |
| On resistance (maximum) for different Ids and Vgs | 13.4 mΩ @ 10A,10V,9.3 mΩ @ 12A,10V |
| Vgs (th) (maximum) for different Ids | 2.55V @ 250µA |
| Gate charge (Qg) at different Vgs (maximum) | 11nC @ 4.5V,23nC @ 4.5V |
| Input capacitance at different Vds (Ciss) (maximum) | 900pF @ 10V,1860pF @ 10V |
| FET function | standard |