IRF9910TRPBF-1
Home
Category
FET, MOSFET
IRF9910TRPBF-1
The pictures are for reference only

IRF9910TRPBF-1

Brand:Infineon
Model:IRF9910TRPBF-1
stock:10058
Store:ShenZhen/Hongkong
Price: The market price fluctuates. Please consult the customer service for the actual price
Contact Us
product details
Common problem
Industry trends
Installation type Surface mount
packing TR
series HEXFET®
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing 8-SOIC(0.154,3.90mm wide)
Warehouse China/Hong Kong
quality Original genuine
Power - maximum 2W(Ta)
FET Type 2 N-channels(two)
Drain source voltage (Vdss) 20V
Current at 25 ° C - continuous drain (Id) 10A(Ta),12A(Ta)
On resistance (maximum) for different Ids and Vgs 13.4 mΩ @ 10A,10V,9.3 mΩ @ 12A,10V
Vgs (th) (maximum) for different Ids 2.55V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 11nC @ 4.5V,23nC @ 4.5V
Input capacitance at different Vds (Ciss) (maximum) 900pF @ 10V,1860pF @ 10V
FET function standard
Common problem
RFQ
WhatsApp
Click the button below to copy the Skype
Click the button below to copy the Wechat
Click the button below to copy the Whatsapp
Click the button below to copy the Line
RFQ
We will reply to you through your email address as soon as we receive your RFQ
Cookies Notification