| Installation type | Base installation |
| packing | pipe |
| Part status | On sale |
| working temperature | -40°C ~ 175°C(TJ) |
| Encapsulation/Housing | module |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| Power - maximum | 365W(Tc) |
| FET Type | 2 N Channel(phase angle) |
| Drain source voltage (Vdss) | 700V |
| Current at 25 ° C - continuous drain (Id) | 124A(Tc) |
| On resistance (maximum) for different Ids and Vgs | 19 mΩ @ 40A,20V |
| Vgs (th) (maximum) for different Ids | 2.4V @ 4mA |
| Gate charge (Qg) at different Vgs (maximum) | 215nC @ 20V |
| Input capacitance at different Vds (Ciss) (maximum) | 4500pF @ 700V |
| FET function | SiC |