| Installation type | Base installation | 
| packing | pipe | 
| Part status | On sale | 
| working temperature | -40°C ~ 175°C(TJ) | 
| Encapsulation/Housing | module | 
| Warehouse | China/Hong Kong | 
| quality | Original genuine | 
| Power - maximum | 2.97kW(Tc) | 
| FET Type | 2 N Channel(phase angle) | 
| Drain source voltage (Vdss) | 1200V(1.2kV) | 
| Current at 25 ° C - continuous drain (Id) | 733A(Tc) | 
| On resistance (maximum) for different Ids and Vgs | 3.5 mΩ @ 360A,20V | 
| Vgs (th) (maximum) for different Ids | 2.8V @ 9mA | 
| Gate charge (Qg) at different Vgs (maximum) | 2088nC @ 20V | 
| Input capacitance at different Vds (Ciss) (maximum) | 27000pF @1000V | 
| FET function | SiC |