| Installation type | Base installation |
| packing | bulk |
| Part status | On sale |
| working temperature | -40°C ~ 150°C(TJ) |
| Encapsulation/Housing | SP4 |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| Power - maximum | 781W |
| FET Type | 2 N channels(half-bridge) |
| Drain source voltage (Vdss) | 200V |
| Current at 25 ° C - continuous drain (Id) | 208A |
| On resistance (maximum) for different Ids and Vgs | 10 mΩ @ 104A,10V |
| Vgs (th) (maximum) for different Ids | 5V @ 5mA |
| Gate charge (Qg) at different Vgs (maximum) | 280nC @ 10V |
| Input capacitance at different Vds (Ciss) (maximum) | 14400pF @ 25V |
| FET function | standard |