| Installation type | Base installation | 
| packing | bulk | 
| Part status | On sale | 
| working temperature | -40°C ~ 150°C(TJ) | 
| Encapsulation/Housing | SP6 | 
| Warehouse | China/Hong Kong | 
| quality | Original genuine | 
| Power - maximum | 1250W | 
| FET Type | 2 N channels(half-bridge) | 
| Drain source voltage (Vdss) | 1200V(1.2kV) | 
| Current at 25 ° C - continuous drain (Id) | 60A | 
| On resistance (maximum) for different Ids and Vgs | 175 mΩ @ 30A,10V | 
| Vgs (th) (maximum) for different Ids | 5V @ 10mA | 
| Gate charge (Qg) at different Vgs (maximum) | 748nC @ 10V | 
| Input capacitance at different Vds (Ciss) (maximum) | 20600pF @ 25V | 
| FET function | standard |