| Installation type | Base installation |
| packing | bulk |
| Part status | On sale |
| working temperature | -40°C ~ 150°C(TJ) |
| Encapsulation/Housing | SP3 |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| Power - maximum | 1250W |
| FET Type | 2 N Channel(phase angle) |
| Drain source voltage (Vdss) | 1200V(1.2kV) |
| Current at 25 ° C - continuous drain (Id) | 295A(Tc) |
| On resistance (maximum) for different Ids and Vgs | 9 mΩ @ 200A,20V |
| Vgs (th) (maximum) for different Ids | 2.4V @ 40mA(standard) |
| Gate charge (Qg) at different Vgs (maximum) | 644nC @ 20V |
| Input capacitance at different Vds (Ciss) (maximum) | 11000pF @ 1000V |
| FET function | SiC |