| Installation type | Surface mount |
| packing | TR,CT |
| Part status | On sale |
| working temperature | -55°C ~ 150°C(TJ) |
| Encapsulation/Housing | 6-XFDFN Exposed Pad |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| Power - maximum | 285mW |
| FET Type | 2 N-channels(two) |
| Drain source voltage (Vdss) | 60V |
| Current at 25 ° C - continuous drain (Id) | 260mA |
| On resistance (maximum) for different Ids and Vgs | 2.8 Ω @ 200mA,10V |
| Vgs (th) (maximum) for different Ids | 2.1V @ 250µA |
| Gate charge (Qg) at different Vgs (maximum) | 1nC @ 10V |
| Input capacitance at different Vds (Ciss) (maximum) | 23.6pF @ 10V |
| FET function | Logic level gate |