Installation type | Surface mount |
packing | TR,bulk |
Part status | Final sale |
working temperature | -55°C ~ 150°C(TJ) |
Encapsulation/Housing | 8-WDFN Exposed Pad |
Warehouse | China/Hong Kong |
quality | Original genuine |
Power - maximum | 800mW,810mW |
FET Type | 2 N Channel(two)Asymmetric type |
Drain source voltage (Vdss) | 30V |
Current at 25 ° C - continuous drain (Id) | 5.5A,6.3A |
On resistance (maximum) for different Ids and Vgs | 17.4 mΩ @ 9A,10V |
Vgs (th) (maximum) for different Ids | 2.2V @ 250µA |
Gate charge (Qg) at different Vgs (maximum) | 12nC @ 10V |
Input capacitance at different Vds (Ciss) (maximum) | 605pF @ 15V |
FET function | standard |