NTMFD1D4N02P1E
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NTMFD1D4N02P1E
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NTMFD1D4N02P1E

Brand:ON
Model:NTMFD1D4N02P1E
stock:7391
Store:ShenZhen/Hongkong
Price:1+
$0.26
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product details
Common problem
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Installation type Surface mount
packing TR
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing 8-PowerWDFN
Warehouse China/Hong Kong
quality Original genuine
Power - maximum 960mW(Ta),1W(Ta)
FET Type 2 N Channel(two)Asymmetric type
Drain source voltage (Vdss) 25V
Current at 25 ° C - continuous drain (Id) 13A(Ta),74A(Tc),24A(Ta),155A(Tc)
On resistance (maximum) for different Ids and Vgs 3.3 mΩ @ 20A,10V,1.1 mΩ @ 37A,10V
Vgs (th) (maximum) for different Ids 2V @ 250µA,2V @ 800µA
Gate charge (Qg) at different Vgs (maximum) 7.2nC @ 4.5V,21.5nC @ 4.5V
Input capacitance at different Vds (Ciss) (maximum) 1180pF @ 13V,3603pF @ 13V
FET function standard
Common problem
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