| Installation type | Surface mount |
| packing | TR |
| Part status | On sale |
| working temperature | -55°C ~ 150°C(TJ) |
| Encapsulation/Housing | 8-PowerWDFN |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| Power - maximum | 960mW(Ta),1W(Ta) |
| FET Type | 2 N Channel(two)Asymmetric type |
| Drain source voltage (Vdss) | 25V |
| Current at 25 ° C - continuous drain (Id) | 13A(Ta),74A(Tc),24A(Ta),155A(Tc) |
| On resistance (maximum) for different Ids and Vgs | 3.3 mΩ @ 20A,10V,1.1 mΩ @ 37A,10V |
| Vgs (th) (maximum) for different Ids | 2V @ 250µA,2V @ 800µA |
| Gate charge (Qg) at different Vgs (maximum) | 7.2nC @ 4.5V,21.5nC @ 4.5V |
| Input capacitance at different Vds (Ciss) (maximum) | 1180pF @ 13V,3603pF @ 13V |
| FET function | standard |