| Installation type | Surface mount |
| packing | TR |
| Part status | stop production |
| working temperature | -55°C ~ 150°C(TJ) |
| Encapsulation/Housing | 8-SOIC(0.154,3.90mm wide) |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| Power - maximum | 900mW |
| FET Type | 2 P Channel(two) |
| Drain source voltage (Vdss) | 20V |
| Current at 25 ° C - continuous drain (Id) | 2.8A |
| On resistance (maximum) for different Ids and Vgs | 140 mΩ @ 2.8A,4.5V |
| Vgs (th) (maximum) for different Ids | 1V @ 250µA |
| Gate charge (Qg) at different Vgs (maximum) | 8.5nC @ 4.5V |
| Input capacitance at different Vds (Ciss) (maximum) | 405pF @ 10V |
| FET function | Logic level gate |