NTJD4158CT2G
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NTJD4158CT2G
Brand：ON
Model：NTJD4158CT2G
stock：1003
Store：ShenZhen/Hongkong
Price:
The market price fluctuates. Please consult the customer service for the actual price
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| Installation type | Surface mount |
| packing | TR |
| Part status | stop production |
| working temperature | -55°C ~ 150°C(TJ) |
| Encapsulation/Housing | 6-TSSOP,SC-88,SOT-363 |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| Power - maximum | 270mW |
| FET Type | N and P Channel |
| Drain source voltage (Vdss) | 30V,20V |
| Current at 25 ° C - continuous drain (Id) | 250mA,880mA |
| On resistance (maximum) for different Ids and Vgs | 1.5 Ω @ 10mA,4.5V |
| Vgs (th) (maximum) for different Ids | 1.5V @ 100µA |
| Gate charge (Qg) at different Vgs (maximum) | 1.5nC @ 5V |
| Input capacitance at different Vds (Ciss) (maximum) | 33pF @ 5V |
| FET function | Logic level gate |
Common problem
Industry trends
The market estimates that the price of Q4 memory DRAM will be reduced by about 15%, and the price of DDR5 will be closer to DDR4
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Texas Instruments' new Texas chip factory began mass production
Samsung M391A2K43DB1-CWE DDR4 16G 2933 memory memory IC chip
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