NTMD6601NR2G
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NTMD6601NR2G
Brand：ON
Model：NTMD6601NR2G
stock：11859
Store：ShenZhen/Hongkong
Price：1+
$0.08
The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
Industry trends
| Installation type | Surface mount |
| packing | TR,bulk |
| Part status | stop production |
| working temperature | -55°C ~ 150°C(TJ) |
| Encapsulation/Housing | 8-SOIC(0.154,3.90mm wide) |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| Power - maximum | 600mW |
| FET Type | 2 N-channels(two) |
| Drain source voltage (Vdss) | 80V |
| Current at 25 ° C - continuous drain (Id) | 1.1A |
| On resistance (maximum) for different Ids and Vgs | 215 mΩ @ 2.2A,10V |
| Vgs (th) (maximum) for different Ids | 3V @ 250µA |
| Gate charge (Qg) at different Vgs (maximum) | 15nC @ 10V |
| Input capacitance at different Vds (Ciss) (maximum) | 400pF @ 25V |
| FET function | Logic level gate |
Common problem
Industry trends
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