| Installation type | Surface mount |
| packing | TR,bulk |
| Part status | stop production |
| working temperature | -55°C ~ 150°C(TJ) |
| Encapsulation/Housing | 8-PowerTDFN |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| Power - maximum | 1.1W |
| FET Type | 2 N Channel(two)Asymmetric type |
| Drain source voltage (Vdss) | 30V |
| Current at 25 ° C - continuous drain (Id) | 11.7A,14.9A |
| On resistance (maximum) for different Ids and Vgs | 5.4 mΩ @ 30A,10V |
| Vgs (th) (maximum) for different Ids | 2.2V @ 250µA |
| Gate charge (Qg) at different Vgs (maximum) | 22.2nC @ 10V |
| Input capacitance at different Vds (Ciss) (maximum) | 1252pF @ 15V |
| FET function | standard |