| Installation type | Surface mount | 
| packing | TR,CT | 
| series | NexFET™ | 
| Part status | On sale | 
| working temperature | -55°C ~ 125°C | 
| Encapsulation/Housing | 8-PowerTDFN | 
| Warehouse | China/Hong Kong | 
| quality | Original genuine | 
| Power - maximum | 6W | 
| FET Type | 2 N channels(half-bridge) | 
| Drain source voltage (Vdss) | 25V | 
| Current at 25 ° C - continuous drain (Id) | 20A(Ta) | 
| On resistance (maximum) for different Ids and Vgs | 9.1 mΩ @ 20A,5V,3.4 mΩ @ 20A,5V | 
| Vgs (th) (maximum) for different Ids | 1.9V @ 250µA,1.6V @ 250µA | 
| Gate charge (Qg) at different Vgs (maximum) | 3.8nC @ 45V,7.4nC @ 45V | 
| Input capacitance at different Vds (Ciss) (maximum) | 494pF @ 12.5V,970pF @ 12.5V | 
| FET function | Logic level gate,5V drive |