CSD86336Q3D
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CSD86336Q3D
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CSD86336Q3D

Brand:TI
Model:CSD86336Q3D
stock:5926
Store:ShenZhen/Hongkong
Price:1+
$0.17
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product details
Common problem
Industry trends
Installation type Surface mount
packing TR,CT
series NexFET™
Part status On sale
working temperature -55°C ~ 125°C
Encapsulation/Housing 8-PowerTDFN
Warehouse China/Hong Kong
quality Original genuine
Power - maximum 6W
FET Type 2 N channels(half-bridge)
Drain source voltage (Vdss) 25V
Current at 25 ° C - continuous drain (Id) 20A(Ta)
On resistance (maximum) for different Ids and Vgs 9.1 mΩ @ 20A,5V,3.4 mΩ @ 20A,5V
Vgs (th) (maximum) for different Ids 1.9V @ 250µA,1.6V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 3.8nC @ 45V,7.4nC @ 45V
Input capacitance at different Vds (Ciss) (maximum) 494pF @ 12.5V,970pF @ 12.5V
FET function Logic level gate,5V drive
Common problem
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