| Installation type | Surface mount |
| packing | TR |
| Part status | stop production |
| working temperature | 150°C(TJ) |
| Encapsulation/Housing | 8-SOIC(0.154,3.90mm wide) |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| Power - maximum | 450mW |
| FET Type | N and P Channel |
| Drain source voltage (Vdss) | 30V |
| Current at 25 ° C - continuous drain (Id) | 9A,7.4A |
| On resistance (maximum) for different Ids and Vgs | 17 mΩ @ 4.5A,10V |
| Vgs (th) (maximum) for different Ids | 2.3V @ 100µA |
| Gate charge (Qg) at different Vgs (maximum) | 17nC @ 10V |
| Input capacitance at different Vds (Ciss) (maximum) | 1190pF @ 10V |
| FET function | Logic level gate |