| Installation type | Through-Hole |
| packing | bag |
| Part status | On sale |
| working temperature | -55°C ~ 150°C(TJ) |
| Encapsulation/Housing | TO-92-3 |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 40 V |
| Current at 25 ° C - continuous drain (Id) | 700mA(Tj) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 5V,10V |
| On resistance (maximum) for different Ids and Vgs | 750 mΩ @ 1.5A,10V |
| Vgs (th) (maximum) for different Ids | 1.6V @ 1mA |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 190 pF @ 20 V |
| Power dissipation (maximum) | 740mW(Ta) |