DN3135K1-G
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DN3135K1-G
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DN3135K1-G

Brand:Microchip
Model:DN3135K1-G
stock:89737
Store:ShenZhen/Hongkong
Price:1+
$0.13
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product details
Common problem
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Installation type Surface mount
packing TR,CT
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing SOT-23-3
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 350 V
Current at 25 ° C - continuous drain (Id) 72mA(Tj)
Drive voltage (maximum RdsOn, minimum RdsOn) 0V
On resistance (maximum) for different Ids and Vgs 35 Ω @ 150mA,0V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 120 pF @ 25 V
FET function depletion mode
Power dissipation (maximum) 360mW(Ta)
Common problem
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