LND150N3-G-P003
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LND150N3-G-P003
Brand：Microchip
Model：LND150N3-G-P003
stock：66353
Store：ShenZhen/Hongkong
Price：1+
$0.13
The market price fluctuates. Please consult the customer service for the actual price
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| Installation type | Through-Hole |
| packing | TR,CT |
| Part status | On sale |
| working temperature | -55°C ~ 150°C(TJ) |
| Encapsulation/Housing | TO-92-3 |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 500 V |
| Current at 25 ° C - continuous drain (Id) | 30mA(Tj) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 0V |
| On resistance (maximum) for different Ids and Vgs | 1000 Ω @ 500µA,0V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 10 pF @ 25 V |
| FET function | depletion mode |
| Power dissipation (maximum) | 740mW(Ta) |
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