| Installation type | Through-Hole |
| packing | pipe |
| series | POWER MOS V® |
| Part status | On sale |
| Encapsulation/Housing | TO-247 [B] |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 600 V |
| Current at 25 ° C - continuous drain (Id) | 25A(Tc) |
| On resistance (maximum) for different Ids and Vgs | 250 mΩ @ 500mA,10V |
| Vgs (th) (maximum) for different Ids | 4V @ 1mA |
| Gate charge (Qg) at different Vgs (maximum) | 275 nC @ 10 V |
| Input capacitance at different Vds (Ciss) (maximum) | 5160 pF @ 25 V |