Installation type | Through-Hole |
packing | pipe |
Part status | On sale |
working temperature | -55°C ~ 150°C(TJ) |
Encapsulation/Housing | TO-264 [L] |
Country of origin | USA |
Warehouse | China/Hong Kong |
quality | Original genuine |
technology | MOSFET(Metal oxide) |
FET Type | N channels |
Drain source voltage (Vdss) | 600 V |
Current at 25 ° C - continuous drain (Id) | 49A(Tc) |
Drive voltage (maximum RdsOn, minimum RdsOn) | 12V |
On resistance (maximum) for different Ids and Vgs | 125 mΩ @ 24.5A,12V |
Vgs (th) (maximum) for different Ids | 4V @ 2.5mA |
Vgs (max) | ±30V |
Input capacitance at different Vds (Ciss) (maximum) | 9000 pF @ 25 V |
Power dissipation (maximum) | 730W(Tc) |