APTM10UM02FAG
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APTM10UM02FAG
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APTM10UM02FAG

Brand:Microchip
Model:APTM10UM02FAG
stock:35771
Store:ShenZhen/Hongkong
Price:1+
$55.87
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product details
Common problem
Industry trends
Installation type Base installation
packing bulk
Part status On sale
working temperature -40°C ~ 150°C(TJ)
Encapsulation/Housing SP6
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 100 V
Current at 25 ° C - continuous drain (Id) 570A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 2.5 mΩ @ 200A,10V
Vgs (th) (maximum) for different Ids 4V @ 10mA
Gate charge (Qg) at different Vgs (maximum) 1360 nC @ 10 V
Vgs (max) ±30V
Input capacitance at different Vds (Ciss) (maximum) 40000 pF @ 25 V
Power dissipation (maximum) 1660W(Tc)
Common problem
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