APT94N65B2C6
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APT94N65B2C6
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APT94N65B2C6

Brand:Microchip
Model:APT94N65B2C6
stock:81192
Store:ShenZhen/Hongkong
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
Industry trends
Installation type Through-Hole
packing bulk
Part status stop production
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing T-MAX™ [B2]
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 650 V
Current at 25 ° C - continuous drain (Id) 95A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 35 mΩ @ 35.2A,10V
Vgs (th) (maximum) for different Ids 3.5V @ 3.5mA
Gate charge (Qg) at different Vgs (maximum) 320 nC @ 10 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 8140 pF @ 25 V
FET function Grade knot
Power dissipation (maximum) 833W(Tc)
Common problem
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