STU4N52K3
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STU4N52K3
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STU4N52K3

Brand:ST
Model:STU4N52K3
stock:55033
Store:ShenZhen/Hongkong
Price:1+
$0.25
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product details
Common problem
Industry trends
Installation type Through-Hole
packing pipe
series SuperMESH3™
Part status On sale
working temperature 150°C(TJ)
Encapsulation/Housing I-PAK
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 525 V
Current at 25 ° C - continuous drain (Id) 2.5A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 2.6 Ω @ 1.25A,10V
Vgs (th) (maximum) for different Ids 4.5V @ 50µA
Gate charge (Qg) at different Vgs (maximum) 11 nC @ 10 V
Vgs (max) ±30V
Input capacitance at different Vds (Ciss) (maximum) 334 pF @ 100 V
Power dissipation (maximum) 45W(Tc)
Common problem
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