| Installation type | Surface mount | 
| packing | TR,CT | 
| series | Automotive, AEC-Q101 | 
| Part status | On sale | 
| working temperature | -55°C ~ 175°C(TJ) | 
| Encapsulation/Housing | H2PAK-7 | 
| Country of origin | USA | 
| Warehouse | China/Hong Kong | 
| quality | Original genuine | 
| technology | SiCFET(silicon carbide) | 
| FET Type | N channels | 
| Drain source voltage (Vdss) | 650 V | 
| Current at 25 ° C - continuous drain (Id) | 95A(Tc) | 
| Drive voltage (maximum RdsOn, minimum RdsOn) | 18V | 
| On resistance (maximum) for different Ids and Vgs | 26 mΩ @ 50A,18V | 
| Vgs (th) (maximum) for different Ids | 5V @ 5mA | 
| Gate charge (Qg) at different Vgs (maximum) | 162 nC @ 18 V | 
| Vgs (max) | +22V,-10V | 
| Input capacitance at different Vds (Ciss) (maximum) | 3315 pF @ 520 V | 
| Power dissipation (maximum) | 360W(Tc) |