| Installation type | Through-Hole |
| packing | pipe |
| Part status | On sale |
| working temperature | -55°C ~ 200°C(TJ) |
| Encapsulation/Housing | HiP247™ |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | SiCFET(silicon carbide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 1200 V |
| Current at 25 ° C - continuous drain (Id) | 91A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 18V |
| On resistance (maximum) for different Ids and Vgs | 30 mΩ @ 50A,18V |
| Vgs (th) (maximum) for different Ids | 4.9V @ 1mA |
| Gate charge (Qg) at different Vgs (maximum) | 150 nC @ 18 V |
| Vgs (max) | +22V,-10V |
| Input capacitance at different Vds (Ciss) (maximum) | 3540 pF @ 800 V |
| Power dissipation (maximum) | 547W(Tc) |