| Installation type | Surface mount |
| packing | TR,CT |
| series | STripFET™ F6 |
| Part status | On sale |
| working temperature | 175°C(TJ) |
| Encapsulation/Housing | DPAK |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | MOSFET(Metal oxide) |
| FET Type | P channels |
| Drain source voltage (Vdss) | 40 V |
| Current at 25 ° C - continuous drain (Id) | 36A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 4.5V,10V |
| On resistance (maximum) for different Ids and Vgs | 20.5 mΩ @ 18A,10V |
| Vgs (th) (maximum) for different Ids | 2.5V @ 250µA |
| Gate charge (Qg) at different Vgs (maximum) | 22 nC @ 4.5 V |
| Vgs (max) | ±20V |
| Input capacitance at different Vds (Ciss) (maximum) | 2850 pF @ 25 V |
| Power dissipation (maximum) | 60W(Tc) |