STB32NM50N
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STB32NM50N
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STB32NM50N

Brand:ST
Model:STB32NM50N
stock:79790
Store:ShenZhen/Hongkong
Price:1+
$0.81
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product details
Common problem
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Installation type Surface mount
packing TR,CT
series MDmesh™ II
Part status On sale
working temperature 150°C(TJ)
Encapsulation/Housing D²PAK(TO-263)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 500 V
Current at 25 ° C - continuous drain (Id) 22A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 130 mΩ @ 11A,10V
Vgs (th) (maximum) for different Ids 4V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 62.5 nC @ 10 V
Vgs (max) ±25V
Input capacitance at different Vds (Ciss) (maximum) 1973 pF @ 50 V
Power dissipation (maximum) 190W(Tc)
Common problem
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