SCT10N120
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SCT10N120
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SCT10N120

Brand:ST
Model:SCT10N120
stock:85257
Store:ShenZhen/Hongkong
Price:1+
$2.26
The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
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Installation type Through-Hole
packing pipe
Part status On sale
working temperature -55°C ~ 200°C(TJ)
Encapsulation/Housing HiP247™
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology SiCFET(silicon carbide)
FET Type N channels
Drain source voltage (Vdss) 1200 V
Current at 25 ° C - continuous drain (Id) 12A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 20V
On resistance (maximum) for different Ids and Vgs 690 mΩ @ 6A,20V
Vgs (th) (maximum) for different Ids 3.5V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 22 nC @ 20 V
Vgs (max) +25V,-10V
Input capacitance at different Vds (Ciss) (maximum) 290 pF @ 400 V
Power dissipation (maximum) 150W(Tc)
Common problem
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