SCTL35N65G2V
Home
Category
MOSFET
SCTL35N65G2V
The pictures are for reference only

SCTL35N65G2V

Brand:ST
Model:SCTL35N65G2V
stock:8609
Store:ShenZhen/Hongkong
Price:1+
$4.04
The market price fluctuates. Please consult the customer service for the actual price
Contact Us
product details
Common problem
Industry trends
Installation type Surface mount
packing TR,CT
Part status On sale
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing PowerFlat™(8x8)HV
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology SiCFET(silicon carbide)
FET Type N channels
Drain source voltage (Vdss) 650 V
Current at 25 ° C - continuous drain (Id) 40A(Tc)
On resistance (maximum) for different Ids and Vgs 67mΩ @ 20A,20V
Vgs (th) (maximum) for different Ids 5V @ 1mA
Gate charge (Qg) at different Vgs (maximum) 73 nC @ 20 V
Vgs (max) +22V,-10V
Input capacitance at different Vds (Ciss) (maximum) 1370 pF @ 400 V
Power dissipation (maximum) 417W(Tc)
Common problem
RFQ
WhatsApp
Click the button below to copy the Skype
Click the button below to copy the Wechat
Click the button below to copy the Whatsapp
Click the button below to copy the Line
RFQ
We will reply to you through your email address as soon as we receive your RFQ
Cookies Notification