SCTWA35N65G2V
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SCTWA35N65G2V
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SCTWA35N65G2V

Brand:ST
Model:SCTWA35N65G2V
stock:55005
Store:ShenZhen/Hongkong
Price:1+
$3.58
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product details
Common problem
Industry trends
Installation type Through-Hole
packing pipe
Part status On sale
working temperature -55°C ~ 175°C(TJ)
Encapsulation/Housing TO-247 lengthfeedthrough
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology SiCFET(silicon carbide)
FET Type N channels
Drain source voltage (Vdss) 650 V
Current at 25 ° C - continuous drain (Id) 45A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 18V,20V
On resistance (maximum) for different Ids and Vgs 72mΩ @ 20A,20V
Vgs (th) (maximum) for different Ids 3.2V @ 1mA
Gate charge (Qg) at different Vgs (maximum) 73 nC @ 20 V
Vgs (max) +20V,-5V
Input capacitance at different Vds (Ciss) (maximum) 73000 pF @ 400 V
Power dissipation (maximum) 208W(Tc)
Common problem
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