SCTWA90N65G2V
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SCTWA90N65G2V
Brand：ST
Model：SCTWA90N65G2V
stock：91115
Store：ShenZhen/Hongkong
Price：1+
$7.19
The market price fluctuates. Please consult the customer service for the actual price
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| Installation type | Through-Hole |
| packing | pipe |
| Part status | On sale |
| working temperature | -55°C ~ 200°C(TJ) |
| Encapsulation/Housing | TO-247 lengthfeedthrough |
| Country of origin | USA |
| Warehouse | China/Hong Kong |
| quality | Original genuine |
| technology | SiCFET(silicon carbide) |
| FET Type | N channels |
| Drain source voltage (Vdss) | 650 V |
| Current at 25 ° C - continuous drain (Id) | 119A(Tc) |
| Drive voltage (maximum RdsOn, minimum RdsOn) | 18V |
| On resistance (maximum) for different Ids and Vgs | 24 mΩ @ 50A,18V |
| Vgs (th) (maximum) for different Ids | 5V @ 1mA |
| Gate charge (Qg) at different Vgs (maximum) | 157 nC @ 18 V |
| Vgs (max) | +22V,-10V |
| Input capacitance at different Vds (Ciss) (maximum) | 3380 pF @ 400 V |
| Power dissipation (maximum) | 565W(Tc) |
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