STB10N60M2
Home
Category
MOSFET
STB10N60M2
The pictures are for reference only

STB10N60M2

Brand:ST
Model:STB10N60M2
stock:41389
Store:ShenZhen/Hongkong
Price:1+
$0.20
The market price fluctuates. Please consult the customer service for the actual price
Contact Us
product details
Common problem
Industry trends
Installation type Surface mount
packing TR,CT
series MDmesh™ II Plus
Part status On sale
working temperature -55°C ~ 150°C(TJ)
Encapsulation/Housing D²PAK(TO-263)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 600 V
Current at 25 ° C - continuous drain (Id) 7.5A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 600 mΩ @ 3A,10V
Vgs (th) (maximum) for different Ids 4V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 13.5 nC @ 10 V
Vgs (max) ±25V
Input capacitance at different Vds (Ciss) (maximum) 400 pF @ 100 V
Power dissipation (maximum) 85W(Tc)
Common problem
RFQ
WhatsApp
Click the button below to copy the Skype
Click the button below to copy the Wechat
Click the button below to copy the Whatsapp
Click the button below to copy the Line
RFQ
We will reply to you through your email address as soon as we receive your RFQ
Cookies Notification