STP23NM60N
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STP23NM60N
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STP23NM60N

Brand:ST
Model:STP23NM60N
stock:52664
Store:ShenZhen/Hongkong
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Through-Hole
packing pipe
series MDmesh™ II
Part status stop production
working temperature 150°C(TJ)
Encapsulation/Housing TO-220
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 600 V
Current at 25 ° C - continuous drain (Id) 19A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 10V
On resistance (maximum) for different Ids and Vgs 180 mΩ @ 9.5A,10V
Vgs (th) (maximum) for different Ids 4V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 60 nC @ 10 V
Vgs (max) ±25V
Input capacitance at different Vds (Ciss) (maximum) 2050 pF @ 50 V
Power dissipation (maximum) 150W(Tc)
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