STB95N3LLH6
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STB95N3LLH6
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STB95N3LLH6

Brand:ST
Model:STB95N3LLH6
stock:68640
Store:ShenZhen/Hongkong
DataSheet: DataSheet
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
Industry trends
Installation type Surface mount
packing TR,CT
series DeepGATE™, STripFET™ VI
Part status stop production
working temperature 175°C(TJ)
Encapsulation/Housing D²PAK(TO-263)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type N channels
Drain source voltage (Vdss) 30 V
Current at 25 ° C - continuous drain (Id) 80A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 4.5V,10V
On resistance (maximum) for different Ids and Vgs 4.2 mΩ @ 40A,10V
Vgs (th) (maximum) for different Ids 2.5V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 24.5 nC @ 4.5 V
Vgs (max) ±20V
Input capacitance at different Vds (Ciss) (maximum) 2200 pF @ 25 V
FET function -
Power dissipation (maximum) 70W(Tc)
Common problem
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