STL8P2UH7
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STL8P2UH7
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STL8P2UH7

Brand:ST
Model:STL8P2UH7
stock:282
Store:ShenZhen/Hongkong
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
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Installation type Surface mount
packing TR,CT
series DeepGATE™, STripFET™ VII
Part status stop production
working temperature 150°C(TJ)
Encapsulation/Housing PowerFlat™(2x2)
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 20 V
Current at 25 ° C - continuous drain (Id) 8A(Tc)
Drive voltage (maximum RdsOn, minimum RdsOn) 1.5V,4.5V
On resistance (maximum) for different Ids and Vgs 22.5 mΩ @ 4A,4.5V
Vgs (th) (maximum) for different Ids 1V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 22 nC @ 4.5 V
Vgs (max) ±8V
Input capacitance at different Vds (Ciss) (maximum) 2390 pF @ 16 V
Power dissipation (maximum) 2.4W(Tc)
Common problem
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