STR1P2UH7
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STR1P2UH7
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STR1P2UH7

Brand:ST
Model:STR1P2UH7
stock:84037
Store:ShenZhen/Hongkong
Price: The market price fluctuates. Please consult the customer service for the actual price
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Installation type Surface mount
packing TR,CT
series STripFET™ H7
Part status stop production
working temperature 150°C(TJ)
Encapsulation/Housing SOT-23-3
Country of origin USA
Warehouse China/Hong Kong
quality Original genuine
technology MOSFET(Metal oxide)
FET Type P channels
Drain source voltage (Vdss) 20 V
Current at 25 ° C - continuous drain (Id) 1.4A(Ta)
Drive voltage (maximum RdsOn, minimum RdsOn) 1.8V,4.5V
On resistance (maximum) for different Ids and Vgs 100 mΩ @ 700mA,4.5V
Vgs (th) (maximum) for different Ids 1V @ 250µA
Gate charge (Qg) at different Vgs (maximum) 4.8 nC @ 4.5 V
Vgs (max) ±8V
Input capacitance at different Vds (Ciss) (maximum) 510 pF @ 10 V
Power dissipation (maximum) 350mW(Tc)
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